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  rev.2.00, apr.05.2004, page 1 of 5 2SJ399 silicon p-channel mos fet rej03g0193-0200z (previous ade-208-267 (z) ) rev.2.00 apr.05.2004 application low frequency power switching features ? low on-resistance ? small package ? low drive current ? 4 v gate drive device can be driven from 5 v source ? suitable for low signal load switch. outline mpak 1. source 2. gate 3. drain s d g 2 1 3 note: marking is ?zf??
2SJ399 rev.2.00, apr.05.2004, page 2 of 5 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss ?30 v gate to source voltage v gss 20 v drain current i d ?0.2 a drain peak current i d(pulse) note ?0.4 a body to drain diode reverse drain current i dr ?0.2 a channel dissipation pch 150 mw channel temperature tch 150 c storage temperature tstg ?55 to +150 c note: pw 100 s, duty cycle 10% electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss ?30 ? ? v i d = ?100 a, v gs = 0 gate to source breakdown voltage v (br)gss 20??v i g = 100 a, v ds = 0 gate to source leak current i gss ??2 av gs = 16 v, v ds = 0 zero gate voltage drain current i dss ???1 av ds = ?30 v, v gs = 0 gate to source cutoff voltage v gs(off) ?1.0 ? ?2.0 v i d = ?10 a, v ds = ?5 v ?2.77.5 ? i d = ?20 ma, v gs = ?4 v static drain to source on state resistance r ds(on) ?2.07.0 ? i d = ?10 ma, v gs = ?10 v input capacitance ciss ? 1.1 ? pf output capacitance coss ? 22.3 ? pf reverse transfer capacitance crss ? 0.17 ? pf v ds = ?10 v v gs = 0 f = 1 mhz turn-on delay time t d(on) ? 530 ? ns rise time t r ? 2170 ? ns turn-off delay time t d(off) ? 7640 ? ns fall time t f ? 7690 ? ns i d = ?0.1 a v gs = ?10 v r l = 100 ? pw = 5 s note: pulse test
2SJ399 rev.2.00, apr.05.2004, page 3 of 5 main characteristics 200 150 100 50 0 channel power dissipation pch (mw) 50 100 150 200 ambient temperature ta (c) maximum channel dissipation curve drain to source voltage v (v) ds drain current i (a) d maximum safe operation area ?0.1 ?0.3 ?1 ?3 ?10 ?30 ?100 ?1 ?0.1 ?0.01 ?0.001 ?0.3 ?0.03 ?0.003 1 ms pw = 10 ms dc operation ta = 25 c operation in this area is limited by r ds(on) ?2.0 ?1.6 ?1.2 ?0.8 ?0.4 0 ?2 ?4 ?6 ?8 ?10 drain to source voltage v (v) ds drain current i (a) d typical output characteristics v = ?2 v gs ?5 v ?4.5 v ?4 v ?3.5 v ?3 v ?2.5 v pulse test ?0.5 ?0.4 -0.3 -0.2 ?0.1 0?1?2?3?4?5 gate to source voltage v (v) gs drain current i (a) d typical transfer characteristics 75 c 25 c v = ?10 v ds ta = ?25 c ?0.5 ?0.4 ?0.3 ?0.2 ?0.1 0 gate to source voltage v (v) gs v (v) ds(on) drain to source saturation voltage vs. gate to source voltage drain to source saturation voltage ?4 ?8 ?12 ?16 ?20 ?0.2 a ?0.1 a i = ?0.05 a d drain current i (a) d drain to source on state resistance r ( ) ? ds(on) static drain to source on state resistance vs. drain current ta = 25 c pulse test 100 20 50 10 2 5 1 ?0.01 ?0.02 ?0.05 ?0.1 ?0.2 ?0.5 ?1 ?10 v v = ?4 v gs
2SJ399 rev.2.00, apr.05.2004, page 4 of 5 5 4 3 2 1 ?40 0 40 80 120 160 case temperature tc (c) r ( ) ds(on) static drain to source on state resistance ? static drain to source on state resistance vs. temperature 0 i = ?0.2 a d i = ?0.2 a d ?0.1 a ?0.05 a ?0.1 a ?0.05 a gs v = ?4 v v = ?10 v gs drain current i (a) d forward transfer admittance |y | (s) fs forward transfer admittance vs. drain current 1 0.2 0.5 0.1 0.02 0.01 0.05 ?0.01 ?0.02 ?0.05 ?0.1 ?0.2 ?0.5 ?1 75 c 25 c v = ?10 v pulse test ds ta = ?25 c 0 capacitance c (pf) drain to source voltage v (v) ds typical capacitance vs. drain to source voltage ?10 ?20 ?30 ?40 ?50 100 20 50 10 2 5 1 0.2 0.5 0.1 ciss coss crss v = 0 f = 1 mhz gs drain current i (a) d switching time t (ns) switching characteristics 10000 2000 5000 1000 200 500 100 ?0.1 ?0.2 ?0.5 ?1 ?2 ?5 t f r t d(off) t d(on) t v = ?10 v pw = 5 s gs ?0.5 ?0.4 ?0.3 ?0.2 ?0.1 0 ?0.4 ?0.8 ?1.2 ?1.6 ?2.0 source to drain voltage v (v) sd reverse drain current i (a) dr pulse test ?10 v ?5 v v = 0 gs reverse drain current vs. source to drain voltage
2SJ399 rev.2.00, apr.05.2004, page 5 of 5 package dimensions 0.16 0 ? 0.1 + 0.10 ? 0.06 0.4 + 0.10 ? 0.05 0.95 0.95 1.9 0.2 2.95 0.2 2.8 + 0.2 ? 0.6 0.65 1.5 0.15 0.65 1.1 + 0.2 ? 0.1 0.3 package code jedec jeita mass (reference value) mpak(t) ? conforms 0.011 g as of january, 2003 unit: mm ordering information part name quantity shipping container 2SJ399 3000 pcs 178 mm taping reel (tl) note: for some grades, production may be terminated. please contact the renesas sales office to check the state of production before ordering the product.
keep safety first in your circuit designs! 1. renesas technology corp. puts the maximum effort into making semiconductor products better and more reliable, but there is a lways the possibility that trouble may occur with them. trouble with semiconductors may lead to personal injury, fire or property damage. remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placeme nt of substitutive, auxiliary circuits, (ii) use of nonflammable material or (iii) prevention against any malfunction or mishap. notes regarding these materials 1. these materials are intended as a reference to assist our customers in the selection of the renesas technology corp. product best suited to the customer's application; they do not convey any license under any intellectual property rights, or any other rights, belonging to renesas t echnology corp. or a third party. 2. renesas technology corp. assumes no responsibility for any damage, or infringement of any third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or circuit application examples contained in these materials. 3. all information contained in these materials, including product data, diagrams, charts, programs and algorithms represents i nformation on products at the time of publication of these materials, and are subject to change by renesas technology corp. without notice due to product improvement s or other reasons. it is therefore recommended that customers contact renesas technology corp. or an authorized renesas technology corp. product distrib utor for the latest product information before purchasing a product listed herein. the information described here may contain technical inaccuracies or typographical errors. renesas technology corp. assumes no responsibility for any damage, liability, or other loss rising from these inaccuracies o r errors. please also pay attention to information published by renesas technology corp. by various means, including the renesas techn ology corp. semiconductor home page (http://www.renesas.com). 4. when using any or all of the information contained in these materials, including product data, diagrams, charts, programs, a nd algorithms, please be sure to evaluate all information as a total system before making a final decision on the applicability of the information and products. renesas technology corp. assumes no responsibility for any damage, liability or other loss resulting from the information contained herein. 5. renesas technology corp. semiconductors are not designed or manufactured for use in a device or system that is used under ci rcumstances in which human life is potentially at stake. please contact renesas technology corp. or an authorized renesas technology corp. product distributor when considering the use of a product contained herein for any specific purposes, such as apparatus or systems for transportation, vehicular, medical, aerosp ace, nuclear, or undersea repeater use. 6. the prior written approval of renesas technology corp. is necessary to reprint or reproduce in whole or in part these materi als. 7. if these products or technologies are subject to the japanese export control restrictions, they must be exported under a lic ense from the japanese government and cannot be imported into a country other than the approved destination. any diversion or reexport contrary to the export control laws and regulations of japan and/or the country of destination is prohibited. 8. please contact renesas technology corp. for further details on these materials or the products contained therein. sales strategic planning div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100-0004, japan http://www.renesas.co m renesas technology america, inc. 450 holger way, san jose, ca 95134-1368, u.s.a tel: <1> (408) 382-7500 fax: <1> (408) 382-7501 renesas technology europe limited. dukes meadow, millboard road, bourne end, buckinghamshire, sl8 5fh, united kingdom tel: <44> (1628) 585 100, fax: <44> (1628) 585 900 renesas technology europe gmbh dornacher str. 3, d-85622 feldkirchen, germany tel: <49> (89) 380 70 0, fax: <49> (89) 929 30 11 renesas technology hong kong ltd. 7/f., north tower, world finance centre, harbour city, canton road, hong kong tel: <852> 2265-6688, fax: <852> 2375-6836 renesas technology taiwan co., ltd. fl 10, #99, fu-hsing n. rd., taipei, taiwan tel: <886> (2) 2715-2888, fax: <886> (2) 2713-2999 renesas technology (shanghai) co., ltd. 26/f., ruijin building, no.205 maoming road (s), shanghai 200020, china tel: <86> (21) 6472-1001, fax: <86> (21) 6415-2952 renesas technology singapore pte. ltd. 1, harbour front avenue, #06-10, keppel bay tower, singapore 098632 tel: <65> 6213-0200, fax: <65> 6278-8001 renesas sales offices ? 2004. renesas technology corp., all rights reserved. printed in japan. c olophon .1 .0


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